2N661 GP BJT

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  • 922 NEW JERSEY SEMICONDUCTOR
  • 3 RAYTHEON

Trans GP BJT NPN 300V 15A 3-Pin(2+Tab) TO-3 Sleeve

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Base Voltage 450 V
Maximum Collector Emitter Saturation Voltage 5@15A V
Maximum Collector Emitter Voltage 300 V
Maximum DC Collector Current 15 A
Maximum Power Dissipation 175000 mW
Maximum Transition Frequency 15(Min) MHz
Type NPN