2N6653 GP BJT

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  • 13 GENERAL SEMICONDUCTOR
  • 2 MOTOROLA
  • 2058 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 300V 20A

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Features Values Unit
Configuration Single
Maximum Collector Emitter Voltage 300 V
Maximum DC Collector Current 20 A
Maximum Power Dissipation 175000 mW
Maximum Transition Frequency 15(Typ) MHz
Type NPN