2N6654 GP BJT

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  • 2860 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 350V 20A

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Voltage 350 V
Maximum DC Collector Current 20 A
Maximum Power Dissipation 150000 mW
Maximum Transition Frequency 75(Typ) MHz
Type NPN