2N6659 MOSFET
Datasheet: View
Stock
- 89 NEW JERSEY SEMICONDUCTOR
- 11 SILICONIX
- 5 SOLID SATE
- 17 TOMSON
| Features | Values | Unit |
|---|---|---|
| Category | Power MOSFET | |
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Configuration | Single | |
| Maximum Continuous Drain Current | 1.4 | A |
| Maximum Drain Source Voltage | 35 | V |
| Maximum Gate Source Voltage | ±20 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 6250 | mW |
| Minimum Operating Temperature | -55 | °C |
| Number of Elements per Chip | 1 | |
| Supplier Temperature Grade | Commercial |