2N6672 GP BJT

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  • 77 GENERAL SEMICONDUCTOR
  • 181 HARRIS
  • 2391 NEW JERSEY SEMICONDUCTOR
  • 50 RCA
  • 24 TOMSON

Trans GP BJT NPN 350V 8A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1.5@1mA@5mA V
Maximum Collector Emitter Voltage 350 V
Maximum DC Collector Current 8 A
Maximum Power Dissipation 150000 mW
Type NPN