2N6676 GP BJT
Datasheet: View
Stock
- 133 GENERAL ELECTRIC
- 1 GENERAL SEMI
- 25 GENERAL SEMICONDUCTOR
- 13 HARRIS
- 1 MOTOROLA
- 63 NEW JERSEY SEMICONDUCTOR
- 10 POWER TRANSISTOR CORP
- 60 RCA
- 1 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 450 | V |
| Maximum Collector Emitter Saturation Voltage | 1@3A@15A | V |
| Maximum Collector Emitter Voltage | 300 | V |
| Maximum DC Collector Current | 15 | A |
| Maximum Emitter Base Voltage | 8 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 6000 | mW |
| Type | NPN |