2N6678 GP BJT
Datasheet: View
Stock
- 2 GENERAL ELECTRIC
- 14 GENERAL SEMICONDUCTOR
- 11 HARRIS
- 16 MOTOROLA
- 3281 NEW JERSEY SEMICONDUCTOR
- 53 RCA
- 3 SGS
- 2 SIGNETICS
- 1 ST MICRO
- 4 TOMSON
- 1 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 650 | V |
| Maximum Collector Emitter Saturation Voltage | 1@3A@15A | V |
| Maximum Collector Emitter Voltage | 400 | V |
| Maximum DC Collector Current | 15 | A |
| Maximum Emitter Base Voltage | 8 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 6000 | mW |
| Type | NPN |