2N6686 GP BJT
Datasheet: View
Stock
- 3 HARRIS
- 2570 NEW JERSEY SEMICONDUCTOR
- 3 RF POWER
- 801 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 1.5@2.5mA@10mA | V |
| Maximum Collector Emitter Voltage | 160 | V |
| Maximum DC Collector Current | 25 | A |
| Maximum Power Dissipation | 200000 | mW |
| Type | NPN |