2N6702 GP BJT

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  • 2937 NEW JERSEY SEMICONDUCTOR
  • 50 RCA

Trans GP BJT NPN 90V 7A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 0.8@0.6A@5A 1.5@0.7A@7A
Maximum Collector Emitter Voltage 90 V
Maximum DC Collector Current 7 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 ᄀC
Maximum Power Dissipation 50000 mW
Maximum Transition Frequency 50(Min) MHz
Type NPN