2N6703 GP BJT

Features	Values	Unit
Category	Bipolar Power
Configuration	Single
Material	Si
Maximum Collector Emitter Saturation Voltage	0.8@0.5A@5A	1.5@0.7A@7A
Maximum Collector Emitter Voltage	110	V
Maximum DC Collector Current	7	A
Maximum Emitter Base Voltage	7	V
Maximum Operating Temperature	150	ﾡC
Maximum Power Dissipation	50000	mW
Maximum Transition Frequency	200	MHz
Type	NPN