2N6704 GP BJT

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  • 7 GENERAL ELECTRIC
  • 17 HARRIS
  • 170 NEW JERSEY SEMICONDUCTOR
  • 14 RCA
  • 6 WORLD WIDE

Trans GP BJT NPN 130V 7A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 0.7@0.4A@4A 1.5@0.7A@7A
Maximum Collector Emitter Voltage 130 V
Maximum DC Collector Current 7 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 ᄀC
Maximum Power Dissipation 50000 mW
Maximum Transition Frequency 200 MHz
Type NPN