2N6714 GP BJT

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  • 21 CENTAL SEMI
  • 170 NATIONAL SEMICONDUCTOR
  • 2489 NEW JERSEY SEMICONDUCTOR
  • 104 SILICONIX

Trans GP BJT NPN 30V 2A 3-Pin(3+Tab) TO-237 Box

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 40 V
Maximum Collector Emitter Saturation Voltage 0.5@0.1A@1A V
Maximum Collector Emitter Voltage 30 V
Maximum DC Collector Current 2 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1000 mW
Maximum Transition Frequency 500 MHz
Type NPN