2N6724 Darlington BJT
Datasheet: View
Stock
- 23 GENERAL ELECTRIC
- 16736 NATIONAL SEMICONDUCTOR
- 7140 NEW JERSEY SEMICONDUCTOR
- 34 TOMSON
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Collector Base Voltage | 50 | V |
| Maximum Collector Emitter Voltage | 40 | V |
| Maximum Continuous DC Collector Current | 2 | A |
| Maximum Emitter Base Voltage | 12 | V |
| Maximum Operating Temperature | 150 | °C |
| Minimum DC Current Gain | 25000@200mA@5V|4000@1A@5V | |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Type | NPN | |
| Typical Current Gain Bandwidth | 10(Max) | MHz |