2N6727 GP BJT

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  • 32 NATIONAL SEMICONDUCTOR
  • 353 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 40V 2A 3-Pin(3+Tab) TO-237 Box

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 50 V
Maximum Collector Emitter Saturation Voltage 0.5@0.1A@1A V
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 2 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1000 mW
Maximum Transition Frequency 500 MHz
Type PNP