2N6731 GP BJT

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  • 6367 NATIONAL SEMICONDUCTOR
  • 2563 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 80V 1A 3-Pin E-Line

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 100 V
Maximum Collector Emitter Saturation Voltage 0.35@35mA@350mA V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 1000 mW
Maximum Transition Frequency 500 MHz
Type NPN