2N6731 GP BJT
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- 6367 NATIONAL SEMICONDUCTOR
- 2563 NEW JERSEY SEMICONDUCTOR
Trans GP BJT NPN 80V 1A 3-Pin E-Line
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 100 | V |
| Maximum Collector Emitter Saturation Voltage | 0.35@35mA@350mA | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 1000 | mW |
| Maximum Transition Frequency | 500 | MHz |
| Type | NPN |