2N6739 GP BJT
Datasheet: View
Stock
- 6986 NEW JERSEY SEMICONDUCTOR
- 17 RCA
- 46 RF POWER
- 3 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 1@1A@5A|2@4A@8A | V |
| Maximum Collector Emitter Voltage | 350 | V |
| Maximum DC Collector Current | 10 | A |
| Maximum Emitter Base Voltage | 8 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 100000 | mW |
| Maximum Transition Frequency | 60 | MHz |
| Type | NPN |