2N6773 GP BJT

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  • 12 HARRIS
  • 7145 NEW JERSEY SEMICONDUCTOR
  • 45 RCA

Trans GP BJT NPN 400V 8A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 1@1A@5A 2@4A@8A
Maximum Collector Emitter Voltage 400 V
Maximum DC Collector Current 8 A
Maximum Emitter Base Voltage 8 V
Maximum Operating Temperature 200 ᄀC
Maximum Power Dissipation 150000 mW
Maximum Transition Frequency 60 MHz
Type NPN