2N6932 GP BJT

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  • 8230 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 60V 0.6A 14-Pin TO-116

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Features Values Unit
Category Bipolar Power
Configuration Quad
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 0.4@15mA@150mA|1.6@50mA@500mA V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 0.6 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 1500 mW
Supplier Temperature Grade Military
Type PNP