2N697 GP BJT

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Stock

  • 2550 AMELCO
  • 1 ELECTRONIC TRANSISTOR
  • 81 FAIRCHILD
  • 14 GENERAL ELECTRIC
  • 17 GENERAL TRANSISTOR
  • 142 INTERMETALL
  • 94 MOTOROLA
  • 45 NATIONAL SEMICONDUCTOR
  • 129025 NEW JERSEY SEMICONDUCTOR
  • 5 RAYTHEON
  • 133 RCA
  • 6 ROHM
  • 11 ROHM
  • 28 SIEMENS
  • 205 SILICON TRANSISTOR CORP
  • 9 SOLID STATE TRANSISTOR
  • 2 SOLITRON
  • 5 SYLVANIA
  • 36 TELEDYNE
  • 20 TEXAS INSTRUMENT
  • 118 TRANSITRON
  • 14 WATKINS JOHNSON
  • 9 WORLD WIDE

Trans GP BJT NPN 40V 3-Pin TO-5

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 1.5@15mA@150mA V
Maximum Collector Emitter Voltage 40 V
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 600 mW
Type NPN