2N697H GP BJT

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  • 351 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 40V 3-Pin TO-5

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 1.5@15mA@150mA V
Maximum Collector Emitter Voltage 40 V
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 600 mW
Type NPN