2N699 GP BJT
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- 37 FAIRCHILD
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- 92 GENERAL INSTRUMENT
- 32 MOTOROLA
- 19 NATIONAL SEMICONDUCTOR
- 11275 NEW JERSEY SEMICONDUCTOR
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- 69 SOLID STATE TRANSISTOR
- 4 TELEDYNE
- 413 TELEDYNE
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- 2 TELEDYNE SEMI
- 2994 TEXAS INSTRUMENT
- 63 TRANSITRON
- 1 WATKINS JOHNSON
Trans GP BJT NPN 80V 3-Pin TO-39
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 120 | V |
| Maximum Collector Emitter Saturation Voltage | 5@15mA@150mA | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 175 | °C |
| Maximum Power Dissipation | 600 | mW |
| Maximum Transition Frequency | 50(Min) | MHz |
| Type | NPN |