2N7052 Darlington BJT
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- 130 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Collector Base Voltage | 100 | V |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum Continuous DC Collector Current | 1.5 | A |
| Maximum Emitter Base Voltage | 12 | V |
| Maximum Operating Temperature | 150 | °C |
| Minimum DC Current Gain | 1000@1A@5V|10000@100mA@5V | |
| Minimum Operating Temperature | -55 | °C |
| Number of Elements per Chip | 1 | |
| Type | NPN | |
| Typical Current Gain Bandwidth | 200(Min) | MHz |