2N709 GP BJT
Datasheet: View
Stock
- 64 ELECTRONIC TRANSISTOR
- 6 ESE
- 478 FAIRCHILD
- 6 MOTOROLA
- 8325 NEW JERSEY SEMICONDUCTOR
- 59 RCA
- 13 SOLID STATE TRANSISTOR
- 12 SYLVANIA
- 617 TELEDYNE SEMI
- 172 TEXAS INSTRUMENT
- 50543 TRANSITRON
- 1 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 40 | V |
| Maximum Collector Emitter Saturation Voltage | 0.4@1mA@10mA | V |
| Maximum Collector Emitter Voltage | 15 | V |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 360 | mW |
| Type | NPN |