2N720A GP BJT
Datasheet: View
Stock
- 163 FAIRCHILD
- 187 MOTOROLA
- 2950 NEW JERSEY SEMICONDUCTOR
- 147 RAYTHEON
- 100 SGS
- 3 SOLID STATE TRANSISTOR
- 39 ST MICRO
- 33 TELEDYNE SEMI
- 50 TEXAS INSTRUMENT
- 8 TOMMORROW
- 36 TRANSITRON
- 2 WALBERN
- 3 WESTINGHOUSE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 120 | V |
| Maximum Collector Emitter Saturation Voltage | 5@15mA@150mA | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 0.5 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 500 | mW |
| Type | NPN |