2N757A GP BJT

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  • 82 EFE
  • 24 ESE
  • 2 GENERAL ELECTRIC
  • 90 NATIONAL SEMICONDUCTOR

Trans GP BJT NPN 60V 0.1A 3-Pin TO-18

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1@1mA@10mA V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 0.1 A
Maximum Power Dissipation 500 mW
Maximum Transition Frequency 50(Min) MHz
Type NPN