2N912 GP BJT
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- 100 ELECTRONIC TRANSISTOR
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- 5532 NEW JERSEY SEMICONDUCTOR
- 83 RAYTHEON
- 97 TEXAS INSTRUMENT
Trans GP BJT NPN 60V 3-Pin TO-18
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 1@5mA@50mA | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum Power Dissipation | 500 | mW |
| Maximum Transition Frequency | 40(Min) | MHz |
| Type | NPN |