2N917 RF BJT
Datasheet: View
Stock
- 120 AMELCO
- 665 FAIRCHILD
- 88 GENERAL ELECTRIC
- 288 MEH
- 169 NATIONAL SEMICONDUCTOR
- 154 NEW JERSEY SEMICONDUCTOR
- 168 RAYTHEON
- 269 RCA
- 775 SOLID STATE TRANSISTOR
- 80 TELEDYNE
- 19 TEXAS INSTRUMENT
- 1 TRANSITRON
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Collector Base Voltage | 30(Min) | V |
| Maximum Collector Emitter Saturation Voltage | 0.5@3mA | V |
| Maximum Collector Emitter Voltage | 15(Min) | V |
| Maximum Emitter Base Voltage | 3(Min) | V |
| Maximum Transition Frequency | 500(Min) | MHz |
| Minimum DC Current Gain | 20@3mA@1V | |
| Number of Elements per Chip | 1 |