2N930 GP BJT

default part image

Datasheet: View

Stock

  • 162 FAIRCHILD
  • 8 GENERAL INSTRUMENT
  • 100 INTERMETALL
  • 1084 MOTOROLA
  • 83 NATIONAL SEMICONDUCTOR
  • 22140 NEW JERSEY SEMICONDUCTOR
  • 15 PHILIPS
  • 19 RAYTHEON
  • 9 SOLID STATE TRANSISTOR
  • 216 SOLITRON
  • 4 ST MICRO
  • 10 SYLVANIA
  • 80 TELEDYNE CRYSTALONICS
  • 50 TELEDYNE SEMI
  • 96 TEXAS INSTRUMENT
  • 52 TOMSON
  • 99 TRANSITRON
  • 5 UNION CARBIDE
  • 9 WESTINGHOUSE
  • 3 WORLD WIDE

Trans GP BJT NPN 45V 0.03A 3-Pin TO-18

Request For Quote Datasheet
Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 1@0.5mA@10mA V
Maximum Collector Emitter Voltage 45 V
Maximum DC Collector Current 0.03 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 300 mW
Type NPN