2N938 GP BJT

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  • 14 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 45V 0.03A 3-Pin TO-18

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 1@0.5mA@10mA V
Maximum Collector Emitter Voltage 45 V
Maximum DC Collector Current 0.03 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 300 mW
Type NPN