2N997 GP BJT
Datasheet: View
Stock
- 1 MST
- 109 NEW JERSEY SEMICONDUCTOR
- 3 RAYTHEON
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Maximum Collector Base Voltage | 20 | V |
| Maximum Collector Emitter Saturation Voltage | 0.2@20mA | V |
| Maximum Collector Emitter Voltage | 15 | V |
| Maximum Emitter Base Voltage | 4 | V |
| Maximum Transition Frequency | 100(Min) | MHz |
| Type | PNP |