2N999 Darlington BJT
Datasheet: View
Stock
- 3 FAIRCHILD
- 3 NEW JERSEY SEMICONDUCTOR
- 36 RAYTHEON
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Collector Base Voltage | 100(Min) | V |
| Maximum Collector Emitter Voltage | 60(Min) | V |
| Maximum Emitter Base Voltage | 15(Min) | V |
| Minimum DC Current Gain | 1600@10mA@5V | |
| Number of Elements per Chip | 1 | |
| Type | NPN | |
| Typical Current Gain Bandwidth | 60(Min) | MHz |