2S034 GP BJT

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  • 8 CENTRAL SEMI
  • 36 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 100V 3A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Voltage 100 V
Maximum DC Collector Current 3 A
Maximum Power Dissipation 40000 mW
Maximum Transition Frequency 15(Typ) MHz
Type NPN