2SA1011 GP BJT
Datasheet: View
Stock
- 2005 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 180 | V |
| Maximum Collector Emitter Saturation Voltage | 0.5(Typ)@50mA@500mA | V |
| Maximum Collector Emitter Voltage | 160 | V |
| Maximum DC Collector Current | 1.5 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 25000 | mW |
| Maximum Transition Frequency | 100(Typ) | MHz |
| Type | PNP |