2SA1012 GP BJT
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- 2016 NEW JERSEY SEMICONDUCTOR
- 819 TOSHIBA
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 0.4@150mA@3A | V |
| Maximum Collector Emitter Voltage | 50 | V |
| Maximum DC Collector Current | 5 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 25000 | mW |
| Maximum Transition Frequency | 10(Min) | MHz |
| Type | PNP |