2SA1021 GP BJT
Datasheet: View
Stock
- 1785 NEW JERSEY SEMICONDUCTOR
- 12 TOSHIBA
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Maximum Collector Base Voltage | 50 | V |
| Maximum Collector Emitter Saturation Voltage | 0.5@50mA@1A | V |
| Maximum Collector Emitter Voltage | 50 | V |
| Maximum DC Collector Current | 2 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 900 | mW |
| Maximum Transition Frequency | 100(Min) | MHz |
| Type | PNP |