2SA1030 GP BJT

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  • 1000 NEW JERSEY SEMICONDUCTOR
  • 62 NIPPON SEMI

Trans GP BJT PNP 50V 0.1A 3-Pin(3+Tab) TO-220AB

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 55 V
Maximum Collector Emitter Saturation Voltage 0.2@1mA@10mA V
Maximum Collector Emitter Voltage 50 V
Maximum DC Collector Current 0.1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 300 mW
Maximum Transition Frequency 280(Typ) MHz
Type PNP