2SA1049 GP BJT

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  • 1000 NEW JERSEY SEMICONDUCTOR
  • 2 NIPPON SEMI

Trans GP BJT PNP 120V 0.1A 3-Pin Mini

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 120 V
Maximum Collector Emitter Saturation Voltage 0.3@1mA@10mA V
Maximum Collector Emitter Voltage 120 V
Maximum DC Collector Current 0.1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 125 °C
Maximum Power Dissipation 200 mW
Maximum Transition Frequency 100(Typ) MHz
Type PNP