2SA1060 GP BJT

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  • 20 MATASHITA
  • 1000 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 60V 5A 3-Pin(3+Tab) TO-220AB

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 80 V
Maximum Collector Emitter Saturation Voltage 0.6@0.3A@3A V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 5 A
Maximum Emitter Base Voltage 12 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1500 mW
Type PNP