2SA1078 GP BJT

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  • 504 FUJI
  • 1000 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 120V 12A 3-Pin(3+Tab) RM-60

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 120 V
Maximum Collector Emitter Saturation Voltage 1.8@0.5A@5A V
Maximum Collector Emitter Voltage 120 V
Maximum DC Collector Current 12 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 120000 mW
Maximum Transition Frequency 60(Typ) MHz
Type PNP