2SA1094 GP BJT
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- 1033 NEW JERSEY SEMICONDUCTOR
- 2 TOSHIBA
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 70 | V |
| Maximum Collector Emitter Saturation Voltage | 1@0.15A@1.5A | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 2 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 1200 | mW |
| Maximum Transition Frequency | 150(Typ) | MHz |
| Type | PNP |