2SA1095 GP BJT

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  • 1105 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 60V 2A 3-Pin TO-126B-A1

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 70 V
Maximum Collector Emitter Saturation Voltage 1@0.15A@1.5A V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 2 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1200 mW
Maximum Transition Frequency 150(Typ) MHz
Type PNP