2SA1096 GP BJT

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  • 30 MATASHITA
  • 1000 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 50V 2A 3-Pin TO-126B-A1

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Features Values Unit
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 1@0.15A@1.5A V
Maximum Collector Emitter Voltage 50 V
Maximum DC Collector Current 2 A
Type PNP