2SA1127 GP BJT

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  • 86 MATASHITA
  • 1000 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 55V 0.1A 3-Pin TO-92-B1

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 0.6@10mA@100mA V
Maximum Collector Emitter Voltage 55 V
Maximum DC Collector Current 0.1 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 400 mW
Maximum Transition Frequency 200(Typ) MHz
Type PNP