2SA1129 GP BJT
Datasheet: View
Stock
- 1000 NEW JERSEY SEMICONDUCTOR
- 8 NIPPON SEMI
- 40 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 30 | V |
| Maximum Collector Emitter Saturation Voltage | 0.3@0.1A@3A|0.6@0.5A@5A | V |
| Maximum Collector Emitter Voltage | 30 | V |
| Maximum DC Collector Current | 7 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 1500 | mW |
| Type | PNP |