2SA1160 GP BJT

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  • 1000 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 10V 2A 3-Pin TO-92 Mod

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Base Voltage 20 V
Maximum Collector Emitter Saturation Voltage 0.5@50mA@2A V
Maximum Collector Emitter Voltage 10 V
Maximum DC Collector Current 2 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 900 mW
Maximum Transition Frequency 140(Typ) MHz
Type PNP