2SA1216 GP BJT
Datasheet: View
Stock
- 3385 NEW JERSEY SEMICONDUCTOR
- 27 SANKEN
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Base Voltage | 180 | V |
| Maximum Collector Emitter Saturation Voltage | 2@800mA@8A | V |
| Maximum Collector Emitter Voltage | 180 | V |
| Maximum DC Collector Current | 20 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 200000 | mW |
| Maximum Transition Frequency | 10(Min) | MHz |
| Type | PNP |