2SA1217 GP BJT

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  • 5666 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 160V 15A 3-Pin MT-200

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 160 V
Maximum Collector Emitter Saturation Voltage 2@0.5A@5A V
Maximum Collector Emitter Voltage 160 V
Maximum DC Collector Current 15 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 150000 mW
Maximum Transition Frequency 50(Typ) MHz
Type PNP