2SA1242 GP BJT

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  • 1000 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 20V 5A 3-Pin(2+Tab) New PW-Mold

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 35 V
Maximum Collector Emitter Saturation Voltage 1@0.1A@4A V
Maximum Collector Emitter Voltage 20 V
Maximum DC Collector Current 5 A
Maximum Emitter Base Voltage 8 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1000 mW
Maximum Transition Frequency 170(Typ) MHz
Type PNP