2SA1301 GP BJT

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  • 2965 NEW JERSEY SEMICONDUCTOR
  • 2 TOSHIBA

Trans GP BJT PNP 50V 0.1A 3-Pin NS-B1

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 0.3@5mA@50mA V
Maximum Collector Emitter Voltage 50 V
Maximum DC Collector Current 0.1 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 300 mW
Maximum Transition Frequency 80(Typ) MHz
Type PNP