2SA1358 GP BJT

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  • 2415 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 120V 1A 3-Pin TO-126IS

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 120 V
Maximum Collector Emitter Saturation Voltage 1@50mA@500mA V
Maximum Collector Emitter Voltage 120 V
Maximum DC Collector Current 1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 10000 mW
Maximum Transition Frequency 120(Typ) MHz
Type PNP